2n4402 / 2n4403 pnp epitaxial silicon transistor general purpose transistor collector emitter voltage: v ceo = 4 0 v collector dissipation: p c (max) = 625 mw on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 40 v collector emitter voltage -v ceo 40 v emitter base voltage -v ebo 5 v collector current -i c 600 ma power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
2n4402 / 2n4403 characteristics at t amb =25 o c parameter symbol min. max. unit dc current gain at -v ce =1v, -i c =0.1ma st 2n4403 h fe 30 - - at -v ce =1v, -i c =1ma st 2n4402 st 2n4403 h fe h fe 30 60 - - - - at -v ce =1v, -i c =10ma st 2n4402 st 2n4403 h fe h fe 50 100 - - - - at -v ce =1v, -i c =150ma st 2n4402 st 2n4403 h fe h fe 50 100 150 300 - - at -v ce =2v, -i c =500ma st 2n4403 st 2n4403 h fe h fe 20 20 - - - - collector cutoff current at -v cb =35v -i cbo - 100 na emitter cutoff current at -v eb =5v -i ebo - 100 na collector emitter breakdown voltage at -i c =1ma -v (br)ceo 40 - v collector base breakdown voltage at -i c =100a -v (br)cbo 40 - v emitter base breakdown voltage at -i e =100a -v (br)ebo 5 - v collector saturation voltage at -i c =150ma, -i b =15ma -v cesat - 0.4 v base saturation voltage at -i c =150ma, -i b =15ma -v besat 0.75 0.95 v gain bandwidth product at -v ce =10v, -i c =20ma, f=100mhz st 2n4402 st 2n4403 f t f t 150 200 - - mhz mhz collector base capacitance at -v cb =10v, f=140mhz c cbo - 8.5 pf turn on time at -v cc =30v, -v be =2v, -i c =150ma, -i b1 =15ma t on - 35 ns turn off time at -v cc =30v, -i c =150ma, -i b1 =-i b2 =15ma t off - 255 ns
2n4402 / 2n4403
2n4402 / 2n4403
2n4402 / 2n4403
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